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  r s e m i c o n d u c t o r d b 3 / d c 3 4 / d b 4 / d b 6 silicon bidirectional diac features absolute ratings(limiting values) electrical characteristics the three-layer , two-terminal, axial-lead, hermetically sealed diacs are designed specifically for triggering thyristors. they demonstrate low breakover current at breakover voltage as they withstand peak pulse current. the breakover symmetry is within three volts(db3,dc34,db4) or four volts(db6). these diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universalmotor speed control and heat control. jf's db3/dc34/db4/db6 are bi-directional triggered diode designed to operate in conjunction with t riacs and scr's power dissipation on printed circuit(l=10mm) breakover v oltage (note 2 ) breakover v oltage symmetry c=22nf(note 2) see diagram 1 c=22nf(note 2) see diagram 1 c=22nf(note 2) min min min t yp 28 3236 30 3438 35 4045 56 6070 +4 +3 5 10 5 100 1.5 10 max max max max t yp i=(i bo to if=10ma) see diagram 1 see diagram 2 see diagram 3 v b =0.5 v bo max see diagram 1 breakover current (note1) leakage current (note1) dynamic breakover v oltage (note1) rise t ime (note1) output v oltage (note 1 ) p c mw a t stg /t j t a =50 c tp=10 m s f=100hz repetitive peak on-state current storage and operating junction t emperature c v v v v m a m s m a i trm v bo % +vbo % - % -vbo % % + v % v o i bo i b tr do-35(glass) dimensions in inches and (millimeters) 0.150(3.8) max 1.083(27.5) min 1.083(27.5) min 0.079(2.0) maxdia 0.020(0.52) maxdia 2.0 2.0 2.0 1.6 150 notes : 1.electrical characteristics applicable in both forward and reverse directions. 2.connected in parallel with the devices. symbols parameters v alue db3 dc34 db4 db6 units v alue db3 dc34 db4 db6 units parameters symbols t est condition mechanical da t a case : do-35 glass case w eight : approx. 0.13 gram j f j f high temperature soldering guaranteed : 260 !/ 10 seconds at terminals component in accordance to rohs 2002 / 95 / ec and weee 2002 / 96 / ec - 4 0 t o + 1 2 5 / - 4 0 t o + 1 1 0 jinan jingheng electronics co., l td. http :// www .jinghenggroup.com 3- 2
r at i n g s a n d c h a r a c t e r i s t i c c u r v e s d b 3 / d c 3 4 / d b 4 / d b 6 diagram 1: current-voltage characteristics fig.1-power dissipation versus ambient temperature (maximum values) fig.3-peak pulse current versus pulse duration (maximum values) fig.2-relative variation of vbo versus junction temperature(typical values) diagram 2: test circuit for output voltage diagram 3: test circuit see diagram2 adjust r for i p =0.5a 10ma i bo i b 0.5 v bo v bo i p 90% 10% tr 10k w 220v 50hz 500k w d.u.t r=20 w v o 0.1 m f v +i f -i f +v -v t amb( c) p (mw) v bo (t j ) v bo (t j =25 c) 0 10 0.01 0.1 1 2 100 1000 10000 10 20 30 40 5 0 60 70 80 100 110 120 130 25 1.00 1.02 1.04 1.06 1.08 50 75 100 125 125 9 0 0 20 40 60 80 100 120 140 160 f=100hz t j initial=25 c i trm (a) tp( m s) t j ( c) jinan jingheng electronics co., l td. http :// www .jinghenggroup.com 3- 3


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